| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DXG2CH50A-450EF* | 780P2 | 4800~5000 | 450 | 47.5 | 43.0 | 12.0 | Engineering Sample | |
| DXG2MH50A-50N* | LGA 6mm×10mm | 4700~5000 | 50 | 38.8 | 40.5 | 28.0 | Released Product | |
| DXG1PH60B-10N2* | DFN 4mm×4mm | DC~6000 | 10 | 34.0 | 32.0 | 20.0 | Released Product | |
| DXG1CH08A-540EF* | 780P2 | 758~821 | 540 | 49.0 | 58.0 | 18.0 | Released Product | |
| DXG2CH22A-520EF* | 780P2 | 2110~2170 | 510 | 49.0 | 58.2 | 14.8 | Released Product | |
| DXG1CH27A-200EF* | 780P2 | 2496~2690 | 220 | 45.0 | 50.0 | 14.1 | Released Product | |
| DXG2CH27A-500EFV* | 780P2 | 2500~2700 | 500 | 47.2 | 52.9 | 15.0 | Released Product | |
| DXG1CH38A-200EF* | 780P2 | 3300~3800 | 200 | 44.5 | 45.0 | 15.3 | Released Product | |
| DXG2CH38A-450EFV* | 780P2 | 3300~3800 | 450 | 47.5 | 46.0 | 14.5 | Released Product | |
| DXG1CHD8A-F2EF* | 780P2 | 3300~3800 | 450 | 48.5 | 42.0 | 14.0 | Released Product | |
| DXG2CH50A-200EF* | 780P2 | 4800~5000 | 200 | 44.5 | 44.2 | 14.2 | Released Product | |
| DXG1PH22A-120N* | DFN 7mm×10mm | 1805~2170 | 120 | 42.3 | 55.5 | 14.6 | Released Product | |
| DXG2PH27A-100N* | DFN 7mm×6.5mm | 2496~2690 | 90 | 41.3 | 56.5 | 15.9 | Released Product | |
| DXG2PH36A-70N* | DFN 7mm×6.5mm | 3300~3800 | 60 | 39.3 | 53.5 | 15.4 | Released Product | |
| DXG2PH36A-100N* | DFN 7mm×6.5mm | 3300~3800 | 100 | 41.3 | 54.3 | 15.8 | Released Product | |
| DXG2PH50B-20N* | DFN 4mm×4.5mm | 4400~5000 | 20 | 47.8 | 37.0 | 16.0 | In Development | |
| DXG2PH50A-90N* | DFN 7mm×6.5mm | 4800~5000 | 90 | 41.3 | 48.3 | 12.5 | In Development | |
| DXG2PH60B-14N* | DFN 4mm×4.5mm | DC~6000 | 14 | / | 41.8 | 15.4 | Released Product | |
| DXG1PH60P-40N | DFN 7mm×6.5mm | DC~6000 | 40 | 33.0 | 31.7 | 21.3 | Released Product | |
| DXG1PH60P-60N* | DFN 7mm×6.5mm | DC~6000 | 60 | 40.0 | 55.0 | 19.5 | Released Product |
| Parameter | Value | Unit |
| Frequency (Min.) | 4800 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 52 | V |
| Psat (Typ.) | 56.6 | dBm |
| Power Gain @ 4900 MHz | 11.8 | dB |
| Efficiency @ 4900 MHz | 42.6 | % |
| ACPR @ 4900 MHz | -34.0/-47.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 52 V, IDQA = 2300 mA, VGSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | 2496 | MHz |
| Frequency (Max.) | 2690 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.9 | dBm |
| Power Gain @ 2600 MHz | 15.9 | dB |
| Efficiency @ 2600 MHz | 56.5 | % |
| ACPR @ 2600 MHz | -32.5 | dBc |
| Parameter | Value | Unit |
| Frequency (Min.) | DC | MHz |
| Frequency (Max.) | 6000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 40.3 | dBm |
| Power Gain @ 3500 MHz | 20.2 | dB |
| Efficiency @ 3500 MHz | 32.3 | % |
Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.
| Parameter | Value | Unit |
| Frequency (Min.) | 758 | MHz |
| Frequency (Max.) | 821 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 57.0 | dBm |
| Power Gain @ 780 MHz | 18.0 | dB |
| Efficiency @ 780 MHz | 58.0 | % |
| ACPR @ 780 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2110 | MHz |
| Frequency (Max.) | 2170 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 57.1 | dBm |
| Power Gain @ 2140 MHz | 14.8 | dB |
| Efficiency @ 2140 MHz | 58.2 | % |
| ACPR @ 2140 MHz | -34.6 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | 2496 | MHz |
| Frequency (Max.) | 2690 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 53.4 | dBm |
| Power Gain @ 2595 MHz | 14.1 | dB |
| Efficiency @ 2595 MHz | 50.0 | % |
| ACPR @ 2595 MHz | -30.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | 2500 | MHz |
| Frequency (Max.) | 2700 | MHz |
| Supply Voltage (Typ.) | 47 | V |
| 56.7Psat (Typ.) | 56.7 | dBm |
| Power Gain @ 2593 MHz | 15.0 | dB |
| Efficiency @ 2593 MHz | 52.9 | % |
| ACPR @ 2593 MHz | -32.9 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 53.0 | dBm |
| Power Gain @ 3500 MHz | 15.3 | dB |
| Efficiency @ 3500 MHz | 45.0 | % |
| ACPR @ 3500 MHz | -30.0 | dBC |
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 50 | V |
| Psat (Typ.) | 56.7 | dBm |
| Power Gain @ 3500 MHz | 14.7 | dB |
| Efficiency @ 3500 MHz | 46 | % |
| ACPR @ 3500 MHz | -34.2 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 52 | V |
| Psat (Typ.) | 56.5 | dBm |
| Power Gain @ 3400 MHz | 14.0 | dB |
| Efficiency @ 3400 MHz | 42.0 | % |
| ACPR @ 3400 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | 4800 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 53.2 | dBm |
| Power Gain @ 4900 MHz | 14.2 | dB |
| Efficiency @ 4900 MHz | 44.5 | % |
| ACPR @ 4900 MHz | -28.5/-47 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | 1805 | MHz |
| Frequency (Max.) | 2170 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 50.8 | dBm |
| Power Gain @ 2110 MHz | 14.6 | dB |
| Efficiency @ 2110 MHz | 55.5 | % |
| ACPR @ 2100 MHz | -35.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2496 | MHz |
| Frequency (Max.) | 2690 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.9 | dBm |
| Power Gain @ 2600 MHz | 15.9 | dB |
| Efficiency @ 2600 MHz | 56.5 | % |
| ACPR @ 2600 MHz | -32.5 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 48.1 | dBm |
| Power Gain @ 3500 MHz | 15.4 | dB |
| Efficiency @ 3500 MHz | 53.5 | % |
| ACPR @ 3500 MHz | -31.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 50.2 | dBm |
| Power Gain @ 3500 MHz | 15.8 | dB |
| Efficiency @ 3500 MHz | 54.3 | % |
| ACPR @ 3500 MHz | -32.0 | dBC |
| Parameter | Value | Unit |
| Frequency (Min.) | 4400 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 42.8 | dBm |
| Power Gain @ 4900 MHz | 16.0 | dB |
| Efficiency @ 4900 MHz | 47.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 4800 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.6 | dBm |
| Power Gain @ 4880 MHz | 12.5 | dB |
| Efficiency @ 4880 MHz | 48.3 | % |
| ACPR @ 4880 MHz | -32.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 0 | MHz |
| Frequency (Max.) | 6000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 42.2 | dBm |
| Power Gain @ 3500 MHz | 15.4 | dB |
| Efficiency @ 3500 MHz | 41.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.
| Parameter | Value | Unit |
| Frequency (Min.) | DC | MHz |
| Frequency (Max.) | 6000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 46.3 | dBm |
| Power Gain @ 1842 MHz | 21.3 | dB |
| Efficiency @ 1842 MHz | 31.7 | % |
| ACPR @ 1842 MHz | -41.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS= 48 V, IDQA = 20 mA, VGSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | DC | MHz |
| Frequency (Max.) | 6000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 47.8 | dBm |
| Power Gain @ 1842 MHz | 19.5 | dB |
| Efficiency @ 1842 MHz | 55.0 | % |
| ACPR @ 1842 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
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