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陶封分立功放管

陶封分立功放管

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DF2G5060-140EF2 780P2 5000~6000 140 50.5 54.2 9.5 Engineering Sample
DF2G4460-50DF2 360F1 4400~6000 50.0 47.7 60.8 8.9 Engineering Sample
DF2G4460-30DF2 360F1 4400~6000 30.0 45.5 58.9 9.2 Engineering Sample
DF2H0014-350EF 780P2 DC~1400 350 55.8 67.0 18.2 Engineering Sample
DF2G1020-120CF 400P1 1000~2000 120 51.0 69.0 19.3 Engineering Sample
DF2G0060-25DF 200F1 DC~6000 25.0 45.7 78.0 12.8 Engineering Sample
DF2G0040-35DF 360F1 DC~4000 35.0 47.2 67.2 14.2 Engineering Sample
DF2G0040-45DF 360F1 DC~4000 45.0 48.2 70.6 12.1 Engineering Sample
DF2G0026-330FF 650F2 DC~2600 330 53.1 74.6 15.1 Engineering Sample
DF2G0030-180FF 650F2 DC~3000 180 51.6 81.0 16.4 Engineering Sample
DF2G0030-120DF 360F1 DC~3000 120 51.0 75.9 13.9 Engineering Sample
DF2G0040-90DF 360F1 DC~4000 90.0 51.0 80.6 14.8 Engineering Sample
DF2G0060-10DF 200F1 DC~6000 10.0 42.1 77.2 17.5 Engineering Sample
DXG1CH59B-30DF 360F1 5000~6000 35.0 55.0 30.0 16.0 Released Product
DF2G0040-45CF 360P1 DC~4000 45.0 48.2 70.6 12.1 Engineering Sample
DF2G0030-120CF 360P1 DC~3000 120 51.0 75.9 13.9 Engineering Sample
DF2H0026-650FF 650F2 DC~2600 650 56.0 62.9 24.5 Engineering Sample
DF2H0014-175DF 400F1 DC~1400 175 52.8 67.0 18.2 Engineering Sample
DF2H0014-175CF 400P1 DC~1400 175 52.8 67.0 18.2 Engineering Sample
DF1H0015-900EF 780P2 DC~1500 900 58.7 74.5 17.4 Engineering Sample

DF2G5060-140EF2

Brief description for the product

DF2G5060-140EF2
DF2G5060-140EF2 is a 140 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)5000MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)28V

Psat @ 5000 MHz

50.5dBm

Power Gain @ 5000 MHz

9.7dB

Efficiency @ 5000 MHz

63.3%


Note: Measured in the DF2G5060-140EF2 application circuit, test condition: VDS = 28 V, IDQ = 100 mA.



DF2G4460-50DF2

Brief description for the product

DF2G4460-50DF2
DF2G4460-50DF2 is a 50 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)4400MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)28V

Psat @ 5700 MHz

48.1dBm

Power Gain @ 5700 MHz

9.4dB

Efficiency @ 5700 MHz

61.0%


Note: Measured in the DF2G440-50DF2 application circuit, test condition: VDS = 28 V, IDQ = 400 mA.


DF2G4460-30DF2

Brief description for the product

DF2G4460-30DF2
DF2G4460-30DF2 is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)4400MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)28V

Psat @ 5500 MHz

46.0dBm

Power Gain @ 5500 MHz

9.5dB

Efficiency @ 5500 MHz

66.6%


Note: Measured in the DF2G440-30DF2 application circuit, test condition: VDS = 28 V, IDQ = 200 mA,



DF2H0014-350EF

Brief description for the product

DF2H0014-350EF
DF2H0014-350EF is a 350 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)1400MHz
Supply Voltage (Typ.)48V

Psat1 @ 990 MHz

55.8dBm

Power Gain2 @ 990 MHz

18.2dB

Efficiency2@ 990 MHz

67%


Note: Measured in the DF2H0014-350DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.1. The output power is saturated power.2. Test condition: Based on Pout. = 350 W.


DF2G1020-120CF

Brief description for the product

DF2G1020-120CF
DF2G1020-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1000 to 2000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)28V

Psat1 @ 1800 MHz

51dBm

Power Gain2 @ 1800 MHz

19.3dB

Efficiency2@ 1800 MHz

69%


Note: Measured in the DF2G1020-120CF application circuit, test condition: VDS = 28 V, IDQ = 450 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on Maximum Output Power.2. Test condition: Based on Maximum Drain Efficiency.


DF2G0060-25DF

Brief description for the product

DF2G0060-25DF
DF2G0060-25DF is a 25 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)28V

Psat1 @ 2600 MHz

45.7dBm

Power Gain2 @ 2600 MHz

12.8dB

Efficiency2@ 2600 MHz

78%


Note: Measured in the DF2G0060-25DF application circuit, test condition: VDS = 28 V, IDQ = 80 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on Maximum Output Power.2. Test condition: Based on Maximum Drain Efficiency.


DF2G0040-35DF

Brief description for the product

DF2G0040-35DF
DF2G0040-35DF is a 35 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)4000MHz
Supply Voltage (Typ.)28V

Psat1 @ 4000 MHz

47.2dBm

Power Gain2 @ 4000 MHz

14.2dB

Efficiency2@ 4000 MHz

67.7%


Note: Measured in the DF2G0040-35DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on Maximum Output Power.2. Test condition: Based on Maximum Drain Efficiency.


DF2G0040-45DF

Brief description for the product

DF2G0040-45DF
DF2G0040-45DF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)4000MHz
Supply Voltage (Typ.)28V

Psat1 @ 4000 MHz

48.2dBm

Power Gain2 @ 4000 MHz

12.1dB

Efficiency2@ 4000 MHz

70.6%


Note: Measured in the DF2G0040-45DF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on Maximum Output Power.2. Test condition: Based on Maximum Drain Efficiency.


DF2G0026-330FF

Brief description for the product

DF2G0026-330FF
DF2G0026-330FF is a 330 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)2600MHz
Supply Voltage (Typ.)28V

Psat1 @ 2500 MHz

53.1dBm

Power Gain2 @ 2500 MHz

15.1dB

Efficiency2@ 2500 MHz

74.6%


Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 28 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on one side Maximum Output Power.2. Test condition: Based on one side Maximum Drain Efficiency.


DF2G0030-180FF

Brief description for the product

DF2G0030-180FF
DF2G0030-180FF is a 180 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)3000MHz
Supply Voltage (Typ.)28V

Psat1 @ 2500 MHz

51.6dBm

Power Gain2 @ 2500 MHz

16.4dB

Efficiency2@ 2500 MHz

81.0%


Note: Measured in the DF2G0030-180FF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on Maximum Output Power.2. Test condition: Based on Maximum Drain Efficiency.


DF2G0030-120DF

Brief description for the product

DF2G0030-120DF
DF2G0030-120DF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)3000MHz
Supply Voltage (Typ.)28V

Psat1 @ 2500 MHz

51.4dBm

Power Gain2 @ 2500 MHz

15.3dB

Efficiency2@ 2500 MHz

82.3%


Note: Measured in the DF2G0030-120DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on Maximum Output Power.2. Test condition: Based on Maximum Drain Efficiency.


DF2G0040-90DF

Brief description for the product

DF2G0040-90DF
DF2G0040-90DF is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)4000MHz
Supply Voltage (Typ.)28V

Psat1 @ 2500 MHz

51dBm

Power Gain2 @ 2500 MHz

11.9dB

Efficiency2@ 2500 MHz

80.6%


Note: Measured in the DF2G0040-90DF application circuit, test condition: VDS = 28 V, IDQ = 400 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on Maximum Output Power.2. Test condition: Based on Maximum Drain Efficiency.


DF2G0060-10DF

Brief description for the product

DF2G0060-10DF
DF2G0060-10DF is a 10 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)28V

Psat1 @ 2600 MHz

42.1dBm

Power Gain2 @ 2600 MHz

17.5dB

Efficiency2@ 2600 MHz

77.2%


Note: Measured in the DF2G0060-10DF application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on Maximum Output Power.2. Test condition: Based on Maximum Drain Efficiency.


DXG1CH59B-30DF

Brief description for the product

DXG1CH59B-30DF
DXG1CH59B-30DF is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)5000MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)48V
Psat55dBm
Power Gain16dB
Efficiency30%


Note: Measured in the DXG1CH59B-30DF application circuit, test condition: VDS = 48 V, IDQ = 80 mA, Pavg = 9 W,Pulse width = 100 μs, Duty cycle = 10 %.


DF2G0040-45CF

Brief description for the product

DF2G0040-45CF
DF2G0040-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)4000MHz
Supply Voltage (Typ.)28V

Psat1 @ 4000 MHz

48.2dBm

Power Gain2 @ 4000 MHz

12.1dB

Efficiency2@ 4000 MHz

70.6%


Note: Measured in the DF2G0040-45CF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on Maximum Output Power.2. Test condition: Based on Maximum Drain Efficiency.


DF2G0030-120CF

Brief description for the product

DF2G0030-120CF
DF2G0030-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)3000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2500 MHz

51.4dBm

Power Gain2 @ 2500 MHz

15.3dB

Efficiency2@ 2500 MHz

82.3%


Note: Measured in the DF2G0030-120CF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. Test condition: Based on Maximum Output Power.2. Test condition: Based on Maximum Drain Efficiency.


DF2H0026-650FF

Brief description for the product

DF2H0026-650FF
DF2H0026-650FF is a 650 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)2600MHz
Supply Voltage (Typ.)48V

Psat1 @ 678 MHz

56dBm

Power Gain2 @ 678 MHz

24.5dB

Efficiency1@ 678 MHz

62.9%


Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 48 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.1. The output power is saturated power.2. Test condition: Based on rollback gain @ 50 dbm.


DF2H0014-175DF

Brief description for the product

DF2H0014-175DF
DF2H0014-175DF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)1400MHz
Supply Voltage (Typ.)48V

Psat1 @ 990 MHz

52.8dBm

Power Gain2 @ 990 MHz

18.2dB

Efficiency2@ 910 MHz

67.0%


Note: Measured in the DF2H0014-175DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.1. The output power is saturated power.2. Test condition: Based on Pout. = 175W.


DF2H0014-175CF

Brief description for the product

DF2H0014-175CF
DF2H0014-175CF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)1400MHz
Supply Voltage (Typ.)48V

Psat1 @ 990 MHz

52.8dBm

Power Gain2 @ 990 MHz

18.2dB

Efficiency2@ 910 MHz

67.0%


Note: Measured in the DF2H0014-175CF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.1. The output power is saturated power.2. Test condition: Based on Pout. = 175W.


DF1H0015-900EF

Brief description for the product

DF1H0015-900EF

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)1500MHz
Supply Voltage (Typ.)50V

Psat @ 910 MHz

58.7dBm

Power Gain1 @ 910 MHz

18.6dB

Efficiency1 @ 910 MHz

68.8%


Note: Measured in the DF1H0015-900EF application circuit, test condition: VDS = 50 V, IDQ = 600 mA.

1.Test condition: Based on Pout = 58 dbm.


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