DXG1CH25P-320EF_杏彩体育官网高能半导体

DXG1CH25P-320EF

Brief description for the product

数据手册
应用方案
应用手册
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG1CH25P-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	2400	MHz
Frequency (Max.)	2500	MHz
Supply Voltage (Typ.)	48	V
Psat¹ @ 2435 MHz	55.3	dBm
Power Gain² @ 2435 MHz	14.6	dB
Efficiency² @ 2435 MHz	73.6	%

Note: Above Performance is the typical performance in Dynax's demo with the device soldered onto the heatsink, test condition:V_DS= 50 V, V_GS = - 4.8 V.