DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.
Operating Characteristics
Parameter
Value
Unit
Frequency (Min.)
DC
MHz
Frequency (Max.)
1500
MHz
Supply Voltage (Typ.)
50
V
Psat (Typ.)
61.5
dBm
Power Gain @ 650 MHz
18.0
dB
Efficiency @ 650 MHz
79.0
%
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQ = 200 mA, test signal is CW.
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