DXG2CH27A-500EFV*_杏彩体育官网高能半导体

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中文版

DXG2CH27A-500EFV*

Brief description for the product

数据手册
应用方案
应用手册
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	2500	MHz
Frequency (Max.)	2700	MHz
Supply Voltage (Typ.)	47	V
56.7Psat (Typ.)	56.7	dBm
Power Gain @ 2593 MHz	15.0	dB
Efficiency @ 2593 MHz	52.9	%
ACPR @ 2593 MHz	-32.9	dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS = 47 V, I_DQA = 200 mA, V_GSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.