DXG2CH50A-200EF*_杏彩体育官网高能半导体

DXG2CH50A-200EF*

Brief description for the product

数据手册
应用方案
应用手册
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	4800	MHz
Frequency (Max.)	5000	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	53.2	dBm
Power Gain @ 4900 MHz	14.2	dB
Efficiency @ 4900 MHz	44.5	%
ACPR @ 4900 MHz	-28.5/-47	dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQA = 200 mA, V_GSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.