DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Operating Characteristics
Parameter
Value
Unit
Frequency (Min.)
2400
MHz
Frequency (Max.)
2500
MHz
Supply Voltage (Typ.)
50
V
Psat (Typ.)
57.4
dBm
Power Gain @ 2450 MHz
14.7
dB
Efficiency @ 2450 MHz
73.5
%
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, VGS = - 4.8 V, test signal is CW.
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