DXG1PH60B-10N2*_杏彩体育官网高能半导体

中文版

DXG1PH60B-10N2*

Brief description for the product

DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	DC	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	40.3	dBm
Power Gain @ 3500 MHz	20.2	dB
Efficiency @ 3500 MHz	32.3	%

Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQA = 30 mA.