DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 0 | MHz |
| Frequency (Max.) | 6000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 42.2 | dBm |
| Power Gain @ 3500 MHz | 15.4 | dB |
| Efficiency @ 3500 MHz | 41.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.
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