| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DXG2PH60B-14N* | DFN 4mm×4.5mm | DC~6000 | 42.2 | / | 41.8 | 15.4 | Released Product | |
| DXG1PH60P-40N | DFN 7mm×6.5mm | DC~6000 | 46.3 | 33.0 | 31.7 | 21.3 | Released Product | |
| DXG1PH60P-60N* | DFN 7mm×6.5mm | DC~6000 | 47.8 | 40.0 | 55.0 | 19.5 | Released Product |
DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 0 | MHz |
| Frequency (Max.) | 6000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 42.2 | dBm |
| Power Gain @ 3500 MHz | 15.4 | dB |
| Efficiency @ 3500 MHz | 41.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.
| Parameter | Value | Unit |
| Frequency (Min.) | DC | MHz |
| Frequency (Max.) | 6000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 46.3 | dBm |
| Power Gain @ 1842 MHz | 21.3 | dB |
| Efficiency @ 1842 MHz | 31.7 | % |
| ACPR @ 1842 MHz | -41.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS= 48 V, IDQA = 20 mA, VGSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | DC | MHz |
| Frequency (Max.) | 6000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 47.8 | dBm |
| Power Gain @ 1842 MHz | 19.5 | dB |
| Efficiency @ 1842 MHz | 55.0 | % |
| ACPR @ 1842 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
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