| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| D2H620DE1 | ||||||||
| D2H500DE1 | ||||||||
| D2H400DE1 | ||||||||
| DXG1CH08A-540EF* | 780P2 | 758~821 | 540 | 49.0 | 58.0 | 18.0 | Released Product | |
| D2H320DB1 | ||||||||
| D2H320DE1 | ||||||||
| D2H290DE1 | ||||||||
| DXG2CH22A-520EF* | 780P2 | 2110~2170 | 510 | 49.0 | 58.2 | 14.8 | Released Product | |
| D2H235DE1 | ||||||||
| DXG1CH27A-200EF* | 780P2 | 2496~2690 | 220 | 45.0 | 50.0 | 14.1 | Released Product | |
| DXG2CH27A-500EFV* | 780P2 | 2500~2700 | 500 | 47.2 | 52.9 | 15.0 | Released Product | |
| D2H210DE1 | ||||||||
| D2H185DE1 | ||||||||
| DXG1CH38A-200EF* | 780P2 | 3300~3800 | 200 | 44.5 | 45.0 | 15.3 | Released Product | |
| D2H150DE1 | ||||||||
| DXG2CH38A-450EFV* | 780P2 | 3300~3800 | 450 | 47.5 | 46.0 | 14.5 | Released Product | |
| D2H135DE1 | ||||||||
| DXG1CHD8A-F2EF* | 780P2 | 3300~3800 | 450 | 48.5 | 42.0 | 14.0 | Released Product | |
| D2H120DE1 | ||||||||
| DXG2CH50A-200EF* | 780P2 | 4800~5000 | 200 | 44.5 | 44.2 | 14.2 | Released Product |
| 参数 | 值 | 单元 |
| 产物尺寸 | 1445*5870 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 620 | W |
| 效力 | 75 | % |
| 增益 | 18.3 | Db |
仿真测试前提：VDD = 48 V, IDQ = 2400 mA, 频次 = 2.6 GHz
| 参数 | 值 | 单元 |
| 产物尺寸 | 1225*5900 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 500 | W |
| 效力 | 72 | % |
| 增益 | 18.4 | Db |
仿真测试前提：VDD = 48 V, IDQ = 1872 mA, 频次 = 2.6 GHz
| 参数 | 值 | 单元 |
| 产物尺寸 | 1065*5900 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 400 | W |
| 效力 | 73 | % |
| 增益 | 19.2 | Db |
仿真测试前提：VDD = 48 V, IDQ = 1488 mA, 频次 = 2.6 GHz
| Parameter | Value | Unit |
| Frequency (Min.) | 758 | MHz |
| Frequency (Max.) | 821 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 57.0 | dBm |
| Power Gain @ 780 MHz | 18.0 | dB |
| Efficiency @ 780 MHz | 58.0 | % |
| ACPR @ 780 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| 参数 | 值 | 单元 |
| 产物尺寸 | 915*6075 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 320 | W |
| 效力 | 76 | % |
| 增益 | 20.1 | Db |
仿真测试前提：VDD = 48 V, IDQ = 1180 mA, 频次 = 2.6 GHz
| 参数 | 值 | 单元 |
| 产物尺寸 | 935*5870 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 320 | W |
| 效力 | 76 | % |
| 增益 | 19.3 | Db |
仿真测试前提：VDD = 48 V, IDQ = 1176 mA, 频次 = 2.6 GHz
| 参数 | 值 | 单元 |
| 产物尺寸 | 955*5795 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 290 | W |
| 效力 | 77 | % |
| 增益 | 20.2 | dB |
效力和增益目标为对应2.6GHz测试频点、最大效力点下的仿真数据
仿真测试前提：VDD = 48 V, IDQ = 1056 mA, 频次 = 2.6 GHz
DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2110 | MHz |
| Frequency (Max.) | 2170 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 57.1 | dBm |
| Power Gain @ 2140 MHz | 14.8 | dB |
| Efficiency @ 2140 MHz | 58.2 | % |
| ACPR @ 2140 MHz | -34.6 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| 参数 | 值 | 单元 |
| 产物尺寸 | 835*5440 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 235 | W |
| 效力 | 79 | % |
| 增益 | 20.3 | dB |
仿真测试前提：VDD = 48 V, IDQ = 842 mA, 频次 = 2.6 GHz
| Parameter | Value | Unit |
| Frequency (Min.) | 2496 | MHz |
| Frequency (Max.) | 2690 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 53.4 | dBm |
| Power Gain @ 2595 MHz | 14.1 | dB |
| Efficiency @ 2595 MHz | 50.0 | % |
| ACPR @ 2595 MHz | -30.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| Parameter | Value | Unit |
| Frequency (Min.) | 2500 | MHz |
| Frequency (Max.) | 2700 | MHz |
| Supply Voltage (Typ.) | 47 | V |
| 56.7Psat (Typ.) | 56.7 | dBm |
| Power Gain @ 2593 MHz | 15.0 | dB |
| Efficiency @ 2593 MHz | 52.9 | % |
| ACPR @ 2593 MHz | -32.9 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| 参数 | 值 | 单元 |
| 产物尺寸 | 855*4860 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 210 | W |
| 效力 | 80 | % |
| 增益 | 20.5 | dB |
仿真测试前提：VDD = 48 V, IDQ = 738 mA, 频次 = 2.6 GHz
| 参数 | 值 | 单元 |
| 产物尺寸 | 905*4125 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 185 | W |
| 效力 | 80 | % |
| 增益 | 20.0 | dB |
仿真测试前提：VDD = 48 V, IDQ = 655 mA, 频次 = 2.6 GHz
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 53.0 | dBm |
| Power Gain @ 3500 MHz | 15.3 | dB |
| Efficiency @ 3500 MHz | 45.0 | % |
| ACPR @ 3500 MHz | -30.0 | dBC |
| 参数 | 值 | 单元 |
| 产物尺寸 | 795*3410 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 150 | W |
| 效力 | 80 | % |
| 增益 | 20.4 | dB |
仿真测试前提：VDD = 48 V, IDQ = 504 mA, 频次 = 2.6 GHz
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 50 | V |
| Psat (Typ.) | 56.7 | dBm |
| Power Gain @ 3500 MHz | 14.7 | dB |
| Efficiency @ 3500 MHz | 46 | % |
| ACPR @ 3500 MHz | -34.2 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| 参数 | 值 | 单元 |
| 产物尺寸 | 975*4165 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 135 | W |
| 效力 | 80 | % |
| 增益 | 21.0 | dB |
仿真测试前提：VDD = 48 V, IDQ = 442 mA, 频次 = 2.6 GHz
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 52 | V |
| Psat (Typ.) | 56.5 | dBm |
| Power Gain @ 3400 MHz | 14.0 | dB |
| Efficiency @ 3400 MHz | 42.0 | % |
| ACPR @ 3400 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
| 参数 | 值 | 单元 |
| 产物尺寸 | 860*2710 | mm |
| 利用电压 | 48 | V |
| 典范功率 | 120 | W |
| 效力 | 81 | % |
| 增益 | 20.8 | dB |
仿真测试前提：VDD = 48 V, IDQ = 383 mA, 频次 = 2.6 GHz
| Parameter | Value | Unit |
| Frequency (Min.) | 4800 | MHz |
| Frequency (Max.) | 5000 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 53.2 | dBm |
| Power Gain @ 4900 MHz | 14.2 | dB |
| Efficiency @ 4900 MHz | 44.5 | % |
| ACPR @ 4900 MHz | -28.5/-47 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
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