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产品

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
D2H620DE1
D2H500DE1
D2H400DE1
DXG1CH08A-540EF* 780P2 758~821 540 49.0 58.0 18.0 Released Product
D2H320DB1
D2H320DE1
D2H290DE1
DXG2CH22A-520EF* 780P2 2110~2170 510 49.0 58.2 14.8 Released Product
D2H235DE1
DXG1CH27A-200EF* 780P2 2496~2690 220 45.0 50.0 14.1 Released Product
DXG2CH27A-500EFV* 780P2 2500~2700 500 47.2 52.9 15.0 Released Product
D2H210DE1
D2H185DE1
DXG1CH38A-200EF* 780P2 3300~3800 200 44.5 45.0 15.3 Released Product
D2H150DE1
DXG2CH38A-450EFV* 780P2 3300~3800 450 47.5 46.0 14.5 Released Product
D2H135DE1
DXG1CHD8A-F2EF* 780P2 3300~3800 450 48.5 42.0 14.0 Released Product
D2H120DE1
DXG2CH50A-200EF* 780P2 4800~5000 200 44.5 44.2 14.2 Released Product

D2H620DE1

Brief description for the product

D2H620DE1
D2H620DE1就是一款增碳硅（SiC）基氮化镓（GaN）高电子元器件转入率结晶体管（HEMT），兼具高质量率、高增益控制、有利连接、网络带宽宽等优点和缺点，是几种微波射频射频和微波射频应该用的好确定。

Operating Characteristics

参数值单位
产品尺寸1445*5870mm
应用电压48V
典型功率620W
效率
75%
增益18.3Db











生产率和增益值指标英文为相对应2.6GHz试验频点、很大生产率点下的模拟仿真数据统计

仿真测试条件：VDD = 48 V, IDQ = 2400 mA, 频率 = 2.6 GHz


D2H500DE1

Brief description for the product

D2H500DE1
D2H500DE1都是款无定形碳硅（SiC）基氮化镓（GaN）高光学搬迁率晶状体管（HEMT），含有高有效率率、高收获、非常容易一致、带宽宽等共同点，是不同的微波通信射频和微波通信app的自然的选择。

Operating Characteristics

参数值单位
产品尺寸1225*5900mm
应用电压48V
典型功率500W
效率
72%
增益18.4Db











学习热效率和增加收益指标图为表示2.6GHz测评频点、非常大学习热效率点下的模拟仿真数据源

仿真测试条件：VDD = 48 V, IDQ = 1872 mA, 频率 = 2.6 GHz


D2H400DE1

Brief description for the product

D2H400DE1
D2H400DE1一款氢氟酸处理硅（SiC）基氮化镓（GaN）高电子器件变迁率晶胞管（HEMT），拥有极有率率、高增益值、便于相配、宽带网络宽等基本特征，是各种各样的rf射频和微波射频利用的很好会选择。

Operating Characteristics

参数值单位
产品尺寸1065*5900mm
应用电压48V
典型功率400W
效率
73%
增益19.2Db











使用率和增益值因素为代表2.6GHz测试方法频点、主要使用率点下的仿真模型数据文件

仿真测试条件：VDD = 48 V, IDQ = 1488 mA, 频率 = 2.6 GHz


DXG1CH08A-540EF*

Brief description for the product

DXG1CH08A-540EF*
DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.


Operating Characteristics


ParameterValueUnit
Frequency (Min.)758MHz
Frequency (Max.)821MHz
Supply Voltage (Typ.)48V
Psat (Typ.)57.0dBm
Power Gain @ 780 MHz18.0dB
Efficiency @ 780 MHz58.0%
ACPR @ 780 MHz-28.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H320DB1

Brief description for the product

D2H320DB1
D2H320DB1是一种款氧化硅（SiC）基氮化镓（GaN）高光学渗透率晶胞管（HEMT），体现了提高的效率率、高增益值、可以输入、联通宽带宽等优点，是各种各样rf射频和微波通信应用的很好选定 。

Operating Characteristics

参数值单位
产品尺寸915*6075mm
应用电压48V
典型功率320W
效率
76%
增益20.1Db











效应和增益值的指标为分属2.6GHz测验频点、极限效应点下的防真数据表格

仿真测试条件：VDD = 48 V, IDQ = 1180 mA, 频率 = 2.6 GHz


D2H320DE1

Brief description for the product

D2H320DE1
D2H320DE1就是款氧化硅（SiC）基氮化镓（GaN）高智能转迁率纳米线管（HEMT），具备高效性率、高增益控制、不易适合、联通宽带宽等作用，是各种类型微波通信射频和微波通信软件的理想化选择。

Operating Characteristics

参数值单位
产品尺寸935*5870mm
应用电压48V
典型功率320W
效率
76%
增益19.3Db











有质量和增益控制指数公式为相对2.6GHz检验频点、最高有质量点下的模拟仿真信息

仿真测试条件：VDD = 48 V, IDQ = 1176 mA, 频率 = 2.6 GHz


D2H290DE1

Brief description for the product

D2H290DE1
D2H290DE1不是款氢氟酸处理硅（SiC）基氮化镓（GaN）高電子搬迁率尖晶石管（HEMT），存在极有速度率、高增加收益、方便于筛选、联通宽带宽等优缺点，是所有微波通信射频和微波通信应用领域的满意会选择。

Operating Characteristics

参数值单位
产品尺寸955*5795mm
应用电压48V
典型功率290W
效率
77%
增益20.2dB











效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据

仿真测试条件：VDD = 48 V, IDQ = 1056 mA, 频率 = 2.6 GHz


DXG2CH22A-520EF*

Brief description for the product

DXG2CH22A-520EF*

DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)2110MHz
Frequency (Max.)2170MHz
Supply Voltage (Typ.)48V
Psat (Typ.)57.1dBm
Power Gain @ 2140 MHz14.8dB
Efficiency @ 2140 MHz58.2%
ACPR @ 2140 MHz-34.6dBC


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H235DE1

Brief description for the product

D2H235DE1
D2H235DE1不是款炭化硅（SiC）基氮化镓（GaN）高光学挪动率晶状体管（HEMT），具有着更高的效率、高增加收益、适于匹配好、宽带网宽等特征，是各式rf射频和微波通信适用的期望抉择。

Operating Characteristics

参数值单位
产品尺寸835*5440mm
应用电压48V
典型功率235W
效率
79%
增益20.3dB











速度和增益值因素为相对2.6GHz软件测试频点、较大速度点下的模仿信息

仿真测试条件：VDD = 48 V, IDQ = 842 mA, 频率 = 2.6 GHz


DXG1CH27A-200EF*

Brief description for the product

DXG1CH27A-200EF*
DXG1CH27A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 2496 MHz to 2690 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)2496MHz
Frequency (Max.)2690MHz
Supply Voltage (Typ.)48V
Psat (Typ.)53.4dBm
Power Gain @ 2595 MHz14.1dB
Efficiency @ 2595 MHz50.0%
ACPR @ 2595 MHz-30.0dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH27A-500EFV*

Brief description for the product

DXG2CH27A-500EFV*
DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.


Operating Characteristics


ParameterValueUnit
Frequency (Min.)2500MHz
Frequency (Max.)2700MHz
Supply Voltage (Typ.)47V
56.7Psat (Typ.)56.7dBm
Power Gain @ 2593 MHz15.0dB
Efficiency @ 2593 MHz52.9%
ACPR @ 2593 MHz-32.9dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H210DE1

Brief description for the product

D2H210DE1
D2H210DE1不是款无定形碳硅（SiC）基氮化镓（GaN）高电子器件变更率结晶管（HEMT），有高效、性价比最高率、高增加收益、不易连接、带宽宽等优势特点，是各式频射和微波通信APP的良好挑选。

Operating Characteristics

参数值单位
产品尺寸855*4860mm
应用电压48V
典型功率210W
效率
80%
增益20.5dB











错误率和增益控制依据为分别2.6GHz测试测试频点、最主要错误率点下的模型制作资料

仿真测试条件：VDD = 48 V, IDQ = 738 mA, 频率 = 2.6 GHz


D2H185DE1

Brief description for the product

D2H185DE1
D2H185DE1一款氧化硅（SiC）基氮化镓（GaN）高电子元器件转至率结晶管（HEMT），更具有能力率、高增加收益、更能筛选、宽带网宽等作用，是各方面频射和徽波应运的人生理想确定。

Operating Characteristics

参数值单位
产品尺寸905*4125mm
应用电压48V
典型功率185W
效率
80%
增益20.0dB











的速度和增加收益指標为相应2.6GHz测试软件频点、更大的速度点下的模拟数据资料

仿真测试条件：VDD = 48 V, IDQ = 655 mA, 频率 = 2.6 GHz


DXG1CH38A-200EF*

Brief description for the product

DXG1CH38A-200EF*
DXG1CH38A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 3300 MHz to 3800 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package. 


Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)48V
Psat (Typ.)53.0dBm
Power Gain @ 3500 MHz15.3dB
Efficiency @ 3500 MHz45.0%
ACPR @ 3500 MHz-30.0dBC
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 180 mA, VGSB = - 5.0 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H150DE1

Brief description for the product

D2H150DE1
D2H150DE1就是款无定形碳硅（SiC）基氮化镓（GaN）高网上转至率晶胞管（HEMT），体现了提高速率率、高增益控制、也容易适合、移动宽带宽等特征，是各个rf射频和微波通信软件应用的志向取舍。

Operating Characteristics

参数值单位
产品尺寸795*3410mm
应用电压48V
典型功率150W
效率
80%
增益20.4dB











成功率和增加收益指数公式为使用2.6GHz测试软件频点、最大的成功率点下的仿真技术数据表格

仿真测试条件：VDD = 48 V, IDQ = 504 mA, 频率 = 2.6 GHz


DXG2CH38A-450EFV*

Brief description for the product

DXG2CH38A-450EFV*
DXG2CH38A-450EFV is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)50V
Psat (Typ.)56.7dBm
Power Gain @ 3500 MHz14.7dB
Efficiency @ 3500 MHz46%
ACPR @ 3500 MHz-34.2dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H135DE1

Brief description for the product

D2H135DE1
D2H135DE1也是款增碳硅（SiC）基氮化镓（GaN）高电子器材转迁率晶胞管（HEMT），包括快速率、高收获、也容易一致、光纤宽带宽等特殊性，是不同的频射和徽波应该用的自然采用。

Operating Characteristics

参数值单位
产品尺寸975*4165mm
应用电压48V
典型功率135W
效率
80%
增益21.0dB











生产率和增益控制因素为表示2.6GHz检验频点、比较大生产率点下的仿真技术数据显示

仿真测试条件：VDD = 48 V, IDQ = 442 mA, 频率 = 2.6 GHz


DXG1CHD8A-F2EF*

Brief description for the product

DXG1CHD8A-F2EF*
DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)52V
Psat (Typ.) 56.5dBm
Power Gain @ 3400 MHz14.0dB
Efficiency @ 3400 MHz42.0%
ACPR @ 3400 MHz-28.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H120DE1

Brief description for the product

D2H120DE1
D2H120DE1也是款氧化硅（SiC）基氮化镓（GaN）高电子为了满足电子时代发展的需求，挪动率多晶体管（HEMT），含有高有效率的率、高增益值、有利于配对、移动宽带宽等优点和缺点，是很多频射和微波通信应用的理想化挑选。

Operating Characteristics

参数值单位
产品尺寸860*2710mm
应用电压48V
典型功率120W
效率
81%
增益20.8dB











质量和增加收益要求为分属2.6GHz检测频点、很大质量点下的建模数据表格

仿真测试条件：VDD = 48 V, IDQ = 383 mA, 频率 = 2.6 GHz


DXG2CH50A-200EF*

Brief description for the product

DXG2CH50A-200EF*
DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)4800MHz
Frequency (Max.)5000MHz
Supply Voltage (Typ.)48V
Psat (Typ.)53.2dBm
Power Gain @ 4900 MHz14.2dB
Efficiency @ 4900 MHz44.5%
ACPR @ 4900 MHz-28.5/-47dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


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