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Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DF2H0014-175CF 400P1 DC~1400 175 52.8 67.0 18.2 Engineering Sample
DF1H0015-900EF 780P2 DC~1500 900 58.7 74.5 17.4 Engineering Sample
DF2H0040-185DF 360F1 DC~4000 185 53.7 73.6 15.1 Engineering Sample
DF2H0040-135DF 360F1 DC~4000 135 51.6 78.5 19.0 Engineering Sample
DF2H0040-95DF 360F1 DC~4000 95.0 50.5 77.4 18.3 Engineering Sample
DF2H0060-45CF 200P1 DC~6000 45.0 47.5 75.5 19.3 Engineering Sample
DF2H0060-20DF 200F1 DC~6000 20.0 44.7 76.5 20.0 Engineering Sample
DF2H0060-20CF 200P1 DC~6000 20.0 44.7 76.5 20.0 Engineering Sample
DXG2CH50A-450EF* 780P2 4800~5000 450 47.5 43.0 12.0 Engineering Sample
DXG2MH50A-50N* LGA 6mm×10mm 4700~5000 50 38.8 40.5 28.0 Released Product
DF1G0015-08N LGA 4mm×4mm 20~1500 8.0 39.4 59.4 17.2 Engineering Sample
DXG1PH60B-10N2* DFN 4mm×4mm DC~6000 10 34.0 32.0 20.0 Released Product
DXG1CH25P-320EF 780P2 2435~2465 320 55.0 75.0 14.0 Released Product
D2J080DH2
D2J325DB2
D2J185DE2
D2J160DH2
D2J140DE2
D2J090DE2
D2J070DH2

DF2H0014-175CF

Brief description for the product

DF2H0014-175CF
DF2H0014-175CF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)1400MHz
Supply Voltage (Typ.)48V

Psat1 @ 990 MHz

52.8dBm

Power Gain2 @ 990 MHz

18.2dB

Efficiency2@ 910 MHz

67.0%


Note: Measured in the DF2H0014-175CF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.1. The output power is saturated power.2. Test condition: Based on Pout. = 175W.


DF1H0015-900EF

Brief description for the product

DF1H0015-900EF

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)1500MHz
Supply Voltage (Typ.)50V

Psat @ 910 MHz

58.7dBm

Power Gain1 @ 910 MHz

18.6dB

Efficiency1 @ 910 MHz

68.8%


Note: Measured in the DF1H0015-900EF application circuit, test condition: VDS = 50 V, IDQ = 600 mA.

1.Test condition: Based on Pout = 58 dbm.


DF2H0040-185DF

Brief description for the product

DF2H0040-185DF
DF2H0040-185DF is a 185 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)4000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2600 MHz

53.7dBm

Power Gain2 @ 2600 MHz

15.1dB

Efficiency2 @ 2600 MHz

73.6%

Note: Measured in the DF2H0040-185DF application circuit, test condition: VDS = 48 V, IDQ = 400 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0040-135DF

Brief description for the product

DF2H0040-135DF
DF2H0040-135DF is a 135 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)4000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2500 MHz

51.6dBm

Power Gain2 @ 2500 MHz

19.0dB

Efficiency2 @ 2500 MHz

78.5%


Note: Measured in the DF2H0040-135DF application circuit, test condition: VDS = 48 V, IDQ = 360 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.




DF2H0040-95DF

Brief description for the product

DF2H0040-95DF
DF2H0040-95DF is a 95 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz. 

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)4000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2500 MHz

50.5dBm

Power Gain2 @ 2500 MHz

18.3dB

77.4Efficiency2 @ 2500 MHz

77.4%


Note: Measured in the DF2H0040-95DF application circuit, test condition: VDS = 48 V, IDQ = 200 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0060-45CF

Brief description for the product

DF2H0060-45CF
DF2H0060-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2600 MHz

47.5dBm

Power Gain2 @ 2600 MHz

19.3dB

Efficiency2 @ 2600 MHz

75.5%


Note: Measured in the DF2H0060-45CF application circuit, test condition: VDS = 48 V, IDQ = 80 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.



DF2H0060-20DF

Brief description for the product

DF2H0060-20DF
DF2H0060-20DF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2600 MHz

44.7dBm

Power Gain2 @ 2600 MHz

20dB

Efficiency2 @ 2600 MHz

76.5%


Note: Measured in the DF2H0060-20DF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0060-20CF

Brief description for the product

DF2H0060-20CF
DF2H0060-20CF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz. 

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2600 MHz

44.7dBm

Power Gain2 @ 2600 MHz

20dB

Efficiency2 @ 2600 MHz

76.5%


Note: Measured in the DF2H0060-20CF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.


DXG2CH50A-450EF*

Brief description for the product

DXG2CH50A-450EF*
DXG2CH50A-450EF is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)4800MHz
Frequency (Max.)5000MHz
Supply Voltage (Typ.)52V
Psat (Typ.)56.6dBm
Power Gain @ 4900 MHz11.8dB
Efficiency @ 4900 MHz42.6%
ACPR @ 4900 MHz-34.0/-47.0dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 52 V, IDQA = 2300 mA, VGSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2MH50A-50N*

Brief description for the product

DXG2MH50A-50N*
DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)2496MHz
Frequency (Max.)2690MHz
Supply Voltage (Typ.)48V
Psat (Typ.)49.9dBm
Power Gain @ 2600 MHz15.9dB
Efficiency @ 2600 MHz56.5%
ACPR @ 2600 MHz-32.5dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DF1G0015-08N

Brief description for the product

DF1G0015-08N
DF1G0015-08N is a 8 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1500 MHz. 

Operating Characteristics

ParameterValueUnit
Frequency (Min.)20MHz
Frequency (Max.)1500MHz
Supply Voltage (Typ.)28V
Psat@325 MHz39.7dBm
Power Gain @ 325 MHz17.5dB
Efficiency @ 325 MHz63.8%


Note: Measured in the DF1G0015-08N application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Input signal is CW.


DXG1PH60B-10N2*

Brief description for the product

DXG1PH60B-10N2*
DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)DCMHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)48V
Psat (Typ.)40.3dBm
Power Gain @ 3500 MHz20.2dB
Efficiency @ 3500 MHz32.3%


Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.


DXG1CH25P-320EF

Brief description for the product

DXG1CH25P-320EF
DXG1CH25P-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)2400MHz
Frequency (Max.)2500MHz
Supply Voltage (Typ.)48V

Psat1 @ 2435 MHz

55.3dBm

Power Gain2 @ 2435 MHz

14.6dB

Efficiency2 @ 2435 MHz

73.6%


Note: Above Performance is the typical performance in Dynax's demo  with the device soldered onto the heatsink, test condition:VDS= 50 V, VGS = - 4.8 V.


D2J080DH2

Brief description for the product

D2J080DH2
D2J080DH2不是款无定形碳硅（SiC）基氮化镓（GaN）高电子厂变迁率纳米线管（HEMT），有着极有生产率率、高收获、方便于符合、光纤宽带宽等特质，是各式各样红外光射频和红外光软件应用的非常完美采用。

Operating Characteristics

参数值单位
产品尺寸725*2985mm
典型功率 @6GHz 48V80W
效率 @6GHz 48V73%
增益 @6GHz 48V20.6dB
典型功率 @10GHz 28V44W
效率 @10GHz 28V59%
增益 @10GHz 28V15.5dB














1、速率、收获广告为代表 48V 6GHz频点，较大 速率下的模型模拟参数；

仿真测试条件：VDD = 48 V, IDQ = 264 mA, 频率 = 6 GHz


2、速率、增加收益标识（标签）为对应着 28V 10GHz频点，较大 速率下的模型模拟数据统计

仿真测试条件：VDD = 28 V, IDQ = 264 mA, 频率 = 10 GHz


D2J325DB2

Brief description for the product

D2J325DB2
D2J325DB2就是一款氧化硅（SiC）基氮化镓（GaN）高电子厂迁入率氯化钠晶体管（HEMT），都具有有利用率、高增加收益、适于一致、宽带网宽等特征，是各样rf射频和微波射频广泛应用的理想的抉择。

Operating Characteristics

参数值单位
产品尺寸945*6075mm
典型功率 @6GHz 48V325W
效率 @6GHz 48V61%
增益 @6GHz 48V17.3dB
典型功率 @10GHz 28V180W
效率 @10GHz 28V45%
增益 @10GHz 28V9.8dB














1、率、增加收益标记为匹配 48V 6GHz频点，大率下的模型模拟资料；

仿真测试条件：VDD = 48 V, IDQ = 1267 mA, 频率 = 6 GHz


2、质量、增益控制识别为相对应 28V 10GHz频点，比较大质量下的防真数值

仿真测试条件：VDD = 28 V, IDQ = 1267 mA, 频率 = 10 GHz


D2J185DE2

Brief description for the product

D2J185DE2
D2J185DE2有的是款无定形碳硅（SiC）基氮化镓（GaN）高电子器材变更率晶状体管（HEMT），兼有工作效率率、高收获、最易配对、带宽宽等特性，是各种类型频射和红外光用的满意决定。

Operating Characteristics

参数值单位
产品尺寸920*4250mm
典型功率 @6GHz 48V185W
效率 @6GHz 48V67%
增益 @6GHz 48V18.1dB
典型功率 @10GHz 28V100W
效率 @10GHz 28V52%
增益 @10GHz 28V12.1dB














1、热使用率、增加收益识别为对照 48V 6GHz频点，明显热使用率下的仿真模型的数据；

仿真测试条件：VDD = 48 V, IDQ = 697 mA, 频率 = 6 GHz


2、速度、增益控制标记为相对应 28V 10GHz频点，最好速度下的模型制作数据报告

仿真测试条件：VDD = 28 V, IDQ = 697 mA, 频率 = 10 GHz


D2J160DH2

Brief description for the product

D2J160DH2
D2J0160DH2一款增碳硅（SiC）基氮化镓（GaN）高网络迁入率纳米线管（HEMT），兼有优质率、高增益值、适于适合、光纤宽带宽等优势特点，是各方面rf射频和徽波应用的期望取舍。

Operating Characteristics

参数值单位
产品尺寸800*4390mm
典型功率 @6GHz 48V160W
效率 @6GHz 48V69%
增益 @6GHz 48V19.6dB
典型功率 @10GHz 28V90W
效率 @10GHz 28V54%
增益 @10GHz 28V13.8dB














1、热效应、增益值logo为相应的 48V 6GHz频点，最明显热效应下的仿真软件资料；

仿真测试条件：VDD = 48 V, IDQ = 308 mA, 频率 = 6 GHz


2、热学习效率、增益控制标牌为相匹配的 28V 10GHz频点，最大的热学习效率下的建模数据库

仿真测试条件：VDD = 28 V, IDQ = 308 mA, 频率 = 10 GHz


D2J140DE2

Brief description for the product

D2J140DE2
D2J140DE2也是款氢氟酸处理硅（SiC）基氮化镓（GaN）高微电子转入率纳米线管（HEMT），具备极有工作效率率、高增益值、非常容易一致、宽带网宽等性能，是很多频射和徽波运用的自然选购。

Operating Characteristics

参数值单位
产品尺寸850*3770mm
典型功率 @6GHz 48V140W
效率 @6GHz 48V70%
增益 @6GHz 48V18.4dB
典型功率 @10GHz 28V75W
效率 @10GHz 28V55%
增益 @10GHz 28V13.0dB














1、质量、增加收益安全标识为使用 48V 6GHz频点，最主要质量下的模仿数据分析；

仿真测试条件：VDD = 48 V, IDQ =497 mA, 频率 = 6 GHz


2、使用率、增加收益标贴为相对应的 28V 10GHz频点，极大使用率下的仿真技术数据文件

仿真测试条件：VDD = 28 V, IDQ = 497 mA, 频率 = 10 GHz


D2J090DE2

Brief description for the product

D2J090DE2
D2J090DE2有的是款氢氟酸处理硅（SiC）基氮化镓（GaN）高電子转至率结晶管（HEMT），兼具优质率、高增加收益、方便匹配好、宽带网络宽等特色，是多种频射和红外光APP的非常完美选购。

Operating Characteristics

参数值单位
产品尺寸790*2835mm
典型功率 @6GHz 48V90W
效率 @6GHz 48V73%
增益 @6GHz 48V18.9dB
典型功率 @10GHz 28V50W
效率 @10GHz 28V58%
增益 @10GHz 28V13.7dB














1、使用率、增益控制标志为相匹配的 48V 6GHz频点，最明显使用率下的模型模拟资料；

仿真测试条件：VDD = 48 V, IDQ =308 mA, 频率 = 6 GHz


2、质量、增益控制标示为使用 28V 10GHz频点，最大的质量下的模型仿真数据信息

仿真测试条件：VDD = 28 V, IDQ = 308 mA, 频率 = 10 GHz


D2J070DH2

Brief description for the product

D2J070DH2
D2J070DH2不是款炭化硅（SiC）基氮化镓（GaN）高网络转化率硫化锌管（HEMT），极具快速率、高增益值、最易符合、联通宽带宽等基本特征，是多种微波加热射频和微波加热软件应用的好选泽。

Operating Characteristics

参数值单位
产品尺寸655*2725mm
典型功率 @6GHz 48V70W
效率 @6GHz 48V73%
增益 @6GHz 48V20.5dB
典型功率 @10GHz 28V38W
效率 @10GHz 28V60%
增益 @10GHz 28V15.5dB














1、能力、收获标记为各自 48V 6GHz频点，极限能力下的建模数据文件；

仿真测试条件：VDD = 48 V, IDQ =227 mA, 频率 = 6 GHz


2、质量、增益控制标签为相当于 28V 10GHz频点，非常大质量下的仿真模拟动态数据

仿真测试条件：VDD = 28 V, IDQ = 227 mA, 频率 = 10 GHz


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