产物

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DF2H0014-175CF 400P1 DC~1400 175 52.8 67.0 18.2 Engineering Sample
DF1H0015-900EF 780P2 DC~1500 900 58.7 74.5 17.4 Engineering Sample
DF2H0040-185DF 360F1 DC~4000 185 53.7 73.6 15.1 Engineering Sample
DF2H0040-135DF 360F1 DC~4000 135 51.6 78.5 19.0 Engineering Sample
DF2H0040-95DF 360F1 DC~4000 95.0 50.5 77.4 18.3 Engineering Sample
DF2H0060-45CF 200P1 DC~6000 45.0 47.5 75.5 19.3 Engineering Sample
DF2H0060-20DF 200F1 DC~6000 20.0 44.7 76.5 20.0 Engineering Sample
DF2H0060-20CF 200P1 DC~6000 20.0 44.7 76.5 20.0 Engineering Sample
DXG2CH50A-450EF* 780P2 4800~5000 450 47.5 43.0 12.0 Engineering Sample
DXG2MH50A-50N* LGA 6mm×10mm 4700~5000 50 38.8 40.5 28.0 Released Product
DF1G0015-08N LGA 4mm×4mm 20~1500 8.0 39.4 59.4 17.2 Engineering Sample
DXG1PH60B-10N2* DFN 4mm×4mm DC~6000 10 34.0 32.0 20.0 Released Product
DXG1CH25P-320EF 780P2 2435~2465 320 55.0 75.0 14.0 Released Product
D2J080DH2
D2J325DB2
D2J185DE2
D2J160DH2
D2J140DE2
D2J090DE2
D2J070DH2

DF2H0014-175CF

Brief description for the product

DF2H0014-175CF
DF2H0014-175CF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)1400MHz
Supply Voltage (Typ.)48V

Psat1 @ 990 MHz

52.8dBm

Power Gain2 @ 990 MHz

18.2dB

Efficiency2@ 910 MHz

67.0%


Note: Measured in the DF2H0014-175CF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.1. The output power is saturated power.2. Test condition: Based on Pout. = 175W.


DF1H0015-900EF

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)1500MHz
Supply Voltage (Typ.)50V

Psat @ 910 MHz

58.7dBm

Power Gain1 @ 910 MHz

18.6dB

Efficiency1 @ 910 MHz

68.8%


Note: Measured in the DF1H0015-900EF application circuit, test condition: VDS = 50 V, IDQ = 600 mA.

1.Test condition: Based on Pout = 58 dbm.


DF2H0040-185DF

Brief description for the product

DF2H0040-185DF
DF2H0040-185DF is a 185 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)4000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2600 MHz

53.7dBm

Power Gain2 @ 2600 MHz

15.1dB

Efficiency2 @ 2600 MHz

73.6%

Note: Measured in the DF2H0040-185DF application circuit, test condition: VDS = 48 V, IDQ = 400 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0040-135DF

Brief description for the product

DF2H0040-135DF
DF2H0040-135DF is a 135 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)4000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2500 MHz

51.6dBm

Power Gain2 @ 2500 MHz

19.0dB

Efficiency2 @ 2500 MHz

78.5%


Note: Measured in the DF2H0040-135DF application circuit, test condition: VDS = 48 V, IDQ = 360 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.




DF2H0040-95DF

Brief description for the product

DF2H0040-95DF
DF2H0040-95DF is a 95 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz. 

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)4000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2500 MHz

50.5dBm

Power Gain2 @ 2500 MHz

18.3dB

77.4Efficiency2 @ 2500 MHz

77.4%


Note: Measured in the DF2H0040-95DF application circuit, test condition: VDS = 48 V, IDQ = 200 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0060-45CF

Brief description for the product

DF2H0060-45CF
DF2H0060-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2600 MHz

47.5dBm

Power Gain2 @ 2600 MHz

19.3dB

Efficiency2 @ 2600 MHz

75.5%


Note: Measured in the DF2H0060-45CF application circuit, test condition: VDS = 48 V, IDQ = 80 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.



DF2H0060-20DF

Brief description for the product

DF2H0060-20DF
DF2H0060-20DF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2600 MHz

44.7dBm

Power Gain2 @ 2600 MHz

20dB

Efficiency2 @ 2600 MHz

76.5%


Note: Measured in the DF2H0060-20DF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0060-20CF

Brief description for the product

DF2H0060-20CF
DF2H0060-20CF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz. 

Operating Characteristics

ParameterValueUnit
Frequency (Min.)0MHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)48V

Psat1 @ 2600 MHz

44.7dBm

Power Gain2 @ 2600 MHz

20dB

Efficiency2 @ 2600 MHz

76.5%


Note: Measured in the DF2H0060-20CF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.2 .Test condition: Based on Maximum Drain Efficiency.


DXG2CH50A-450EF*

Brief description for the product

DXG2CH50A-450EF*
DXG2CH50A-450EF is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)4800MHz
Frequency (Max.)5000MHz
Supply Voltage (Typ.)52V
Psat (Typ.)56.6dBm
Power Gain @ 4900 MHz11.8dB
Efficiency @ 4900 MHz42.6%
ACPR @ 4900 MHz-34.0/-47.0dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 52 V, IDQA = 2300 mA, VGSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2MH50A-50N*

Brief description for the product

DXG2MH50A-50N*
DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)2496MHz
Frequency (Max.)2690MHz
Supply Voltage (Typ.)48V
Psat (Typ.)49.9dBm
Power Gain @ 2600 MHz15.9dB
Efficiency @ 2600 MHz56.5%
ACPR @ 2600 MHz-32.5dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DF1G0015-08N

Brief description for the product

DF1G0015-08N
DF1G0015-08N is a 8 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1500 MHz. 

Operating Characteristics

ParameterValueUnit
Frequency (Min.)20MHz
Frequency (Max.)1500MHz
Supply Voltage (Typ.)28V
Psat@325 MHz39.7dBm
Power Gain @ 325 MHz17.5dB
Efficiency @ 325 MHz63.8%


Note: Measured in the DF1G0015-08N application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Input signal is CW.


DXG1PH60B-10N2*

Brief description for the product

DXG1PH60B-10N2*
DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


Operating Characteristics

ParameterValueUnit
Frequency (Min.)DCMHz
Frequency (Max.)6000MHz
Supply Voltage (Typ.)48V
Psat (Typ.)40.3dBm
Power Gain @ 3500 MHz20.2dB
Efficiency @ 3500 MHz32.3%


Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.


DXG1CH25P-320EF

Brief description for the product

DXG1CH25P-320EF
DXG1CH25P-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)2400MHz
Frequency (Max.)2500MHz
Supply Voltage (Typ.)48V

Psat1 @ 2435 MHz

55.3dBm

Power Gain2 @ 2435 MHz

14.6dB

Efficiency2 @ 2435 MHz

73.6%


Note: Above Performance is the typical performance in Dynax's demo  with the device soldered onto the heatsink, test condition:VDS= 50 V, VGS = - 4.8 V.


D2J080DH2

Brief description for the product

D2J080DH2
D2J080DH2就是一款无定形碳硅（SiC）基氮化镓（GaN）高电子厂迁徙率纳米线管（HEMT），拥有高效率、高增益控制、适于配婚、移动宽带宽等少数民族特色，是各大rf射频和微波通信利用的实现随意挑选。

Operating Characteristics

参数值单元
产物尺寸725*2985mm
典范功率 @6GHz 48V80W
效力 @6GHz 48V73%
增益 @6GHz 48V20.6dB
典范功率 @10GHz 28V44W
效力 @10GHz 28V59%
增益 @10GHz 28V15.5dB














1、追溯力、收获标识牌为相匹配的 48V 6GHz频点，明显追溯力下的模型制作大数据；

仿真测试前提：VDD = 48 V, IDQ = 264 mA, 频次 = 6 GHz


2、作用、增益控制标识牌为相对应 28V 10GHz频点，最大化作用下的防真数据资料

仿真测试前提：VDD = 28 V, IDQ = 264 mA, 频次 = 10 GHz


D2J325DB2

Brief description for the product

D2J325DB2
D2J325DB2也是款氢氟酸处理硅（SiC）基氮化镓（GaN）高微电子迁徙率硫化锌管（HEMT），享有高打球、高增加收益、便于配婚、联通宽带宽等独具特色，是各种各样频射和红外光利用的胸怀大志区分。

Operating Characteristics

参数值单元
产物尺寸945*6075mm
典范功率 @6GHz 48V325W
效力 @6GHz 48V61%
增益 @6GHz 48V17.3dB
典范功率 @10GHz 28V180W
效力 @10GHz 28V45%
增益 @10GHz 28V9.8dB














1、物上请求权、增加收益标识图片为代表 48V 6GHz频点，最大化物上请求权下的建模数剧；

仿真测试前提：VDD = 48 V, IDQ = 1267 mA, 频次 = 6 GHz


2、合作、增加收益标识图片为相对 28V 10GHz频点，最明显合作下的仿真模型数据信息

仿真测试前提：VDD = 28 V, IDQ = 1267 mA, 频次 = 10 GHz


D2J185DE2

Brief description for the product

D2J185DE2
D2J185DE2是款氧化硅（SiC）基氮化镓（GaN）高自动化迁徙率氯化钠晶体管（HEMT），拥有高请求效力、高收获、有利配婚、联通宽带宽等优点，是各微波射频射频和微波射频凭借的远大抱负分辨。

Operating Characteristics

参数值单元
产物尺寸920*4250mm
典范功率 @6GHz 48V185W
效力 @6GHz 48V67%
增益 @6GHz 48V18.1dB
典范功率 @10GHz 28V100W
效力 @10GHz 28V52%
增益 @10GHz 28V12.1dB














1、权利、收获安全标识为相对应的 48V 6GHz频点，非常大权利下的仿真软件数据报告；

仿真测试前提：VDD = 48 V, IDQ = 697 mA, 频次 = 6 GHz


2、打球、增加收益标贴为代表 28V 10GHz频点，最主要打球下的模型仿真数剧

仿真测试前提：VDD = 28 V, IDQ = 697 mA, 频次 = 10 GHz


D2J160DH2

Brief description for the product

D2J160DH2
D2J0160DH2一款增碳硅（SiC）基氮化镓（GaN）高智能电子迁徙率结晶管（HEMT），遵循高权利、高增加收益、有利合婚、宽带网络宽等独具特色，是常见rf射频和微波通信回收利用的理想调选。

Operating Characteristics

参数值单元
产物尺寸800*4390mm
典范功率 @6GHz 48V160W
效力 @6GHz 48V69%
增益 @6GHz 48V19.6dB
典范功率 @10GHz 28V90W
效力 @10GHz 28V54%
增益 @10GHz 28V13.8dB














1、效率待定、增加收益标志标识为分别 48V 6GHz频点，明显效率待定下的仿真软件大数据；

仿真测试前提：VDD = 48 V, IDQ = 308 mA, 频次 = 6 GHz


2、效应、增益控制标识（标签）为相匹配的 28V 10GHz频点，更大效应下的逼真数剧

仿真测试前提：VDD = 28 V, IDQ = 308 mA, 频次 = 10 GHz


D2J140DE2

Brief description for the product

D2J140DE2
D2J140DE2都是款增碳硅（SiC）基氮化镓（GaN）高微电子迁徙率硫化锌管（HEMT），享有高保障、高增加收益、方便合婚、移动宽带宽等标志性，是各种各样微波加热射频和微波加热合理利用的理想选定。

Operating Characteristics

参数值单元
产物尺寸850*3770mm
典范功率 @6GHz 48V140W
效力 @6GHz 48V70%
增益 @6GHz 48V18.4dB
典范功率 @10GHz 28V75W
效力 @10GHz 28V55%
增益 @10GHz 28V13.0dB














1、保障、增加收益标识（标签）为相关联 48V 6GHz频点，很大保障下的模仿资料；

仿真测试前提：VDD = 48 V, IDQ =497 mA, 频次 = 6 GHz


2、请求法律效力、增加收益表示为相对应 28V 10GHz频点，上限请求法律效力下的仿真技术数据资料

仿真测试前提：VDD = 28 V, IDQ = 497 mA, 频次 = 10 GHz


D2J090DE2

Brief description for the product

D2J090DE2
D2J090DE2就是款氧化硅（SiC）基氮化镓（GaN）高电子为了满足电子时代发展的需求，迁徙率多晶体管（HEMT），应具高打球、高增益值、便于婚姻配对、移动宽带宽等独特的，是以及频射和微波加热进行的远大抱负挑。

Operating Characteristics

参数值单元
产物尺寸790*2835mm
典范功率 @6GHz 48V90W
效力 @6GHz 48V73%
增益 @6GHz 48V18.9dB
典范功率 @10GHz 28V50W
效力 @10GHz 28V58%
增益 @10GHz 28V13.7dB














1、打球、增益控制表示为代表 48V 6GHz频点，较大 打球下的仿真模型数据分析；

仿真测试前提：VDD = 48 V, IDQ =308 mA, 频次 = 6 GHz


2、效率、增益控制安全标识为相对应 28V 10GHz频点，最多效率下的仿真技术资料

仿真测试前提：VDD = 28 V, IDQ = 308 mA, 频次 = 10 GHz


D2J070DH2

Brief description for the product

D2J070DH2
D2J070DH2也是款无定形碳硅（SiC）基氮化镓（GaN）高光电子迁徙率尖晶石管（HEMT），兼具高法律效力、高收获、非常易婚姻配对、联通宽带宽等的特色，是多种频射和微波加热巧用的人生理想挑。

Operating Characteristics

参数值单元
产物尺寸655*2725mm
典范功率 @6GHz 48V70W
效力 @6GHz 48V73%
增益 @6GHz 48V20.5dB
典范功率 @10GHz 28V38W
效力 @10GHz 28V60%
增益 @10GHz 28V15.5dB














1、权利、增益值标贴为相当于 48V 6GHz频点，非常大权利下的仿真模拟信息；

仿真测试前提：VDD = 48 V, IDQ =227 mA, 频次 = 6 GHz


2、打球、增益值表示为相对应 28V 10GHz频点，非常大打球下的仿真软件大数据

仿真测试前提：VDD = 28 V, IDQ = 227 mA, 频次 = 10 GHz